Supercomputer modeling of stresses in thin optical films at different substrate temperatures
Authors
-
Fedor V. Grigoriev
-
Vladimir B. Sulimov
-
Alexander V. Tikhonravov
Keywords:
atomistic modeling
thin films
high-performance computing
stress in thin films
Abstract
In this paper supercomputer simulations of mechanical stresses in thin silicon dioxide and titanium dioxide films at various deposition temperatures are performed using molecular dynamics. Stress calculations require large atomic clusters, which necessitates the use of parallel computing technologies. It is shown that the type and value of stresses depend significantly on the film material, substrate temperature, and the energy of the deposited atoms. An analysis of the numerical efficiency of supercomputer calculations is performed with taking into account the large size of the atomic simulation box and methods for its improvement are also proposed.
Section
Methods and algorithms of computational mathematics and their applications
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