Numerical simulation for the problem of dynamics of oxide film growth in semiconductor substrates on the basis of geometrical approach and the Deal-Grove method
Keywords:
численные методы, краевые задачи, сегрегационные эффекты, диффузия, процессы окисления, математическое моделирование, параллельные вычисленияAbstract
An approximate simulation for the dynamics of oxide film growth in semiconductor substrates is developed. A generalization of the 1D Deal-Grove method to 2D problems is proposed on the basis of geometrical approach. Some numerical results are given for the following cases: 1) the growth of a subregion for SiO2 under oxidation in various mediums (O2 or H2O) and 2) the dynamics of oxide/material and oxide/oxidant boundaries in a wide range of constitutive parameters and nitride masks covering a part of the silicon surface.
References
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Published
27-06-2001
How to Cite
Александров А., Тарнавский Г., Шпак С., Гулидов А., Обрехт М. Numerical Simulation for the Problem of Dynamics of Oxide Film Growth in Semiconductor Substrates on the Basis of Geometrical Approach and the Deal-Grove Method // Numerical Methods and Programming (Vychislitel’nye Metody i Programmirovanie). 2001. 2. 92-111
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Section
Section 1. Numerical methods and applications