Numerical simulation for the problem of dynamics of oxide film growth in semiconductor substrates on the basis of geometrical approach and the Deal-Grove method

Authors

  • A.L. Alexandrov
  • G.A. Tarnavsky
  • S.I. Shpak
  • A.I. Gulidov
  • M.S. Obrecht

Keywords:

численные методы
краевые задачи
сегрегационные эффекты
диффузия
процессы окисления
математическое моделирование
параллельные вычисления

Abstract

An approximate simulation for the dynamics of oxide film growth in semiconductor substrates is developed. A generalization of the 1D Deal-Grove method to 2D problems is proposed on the basis of geometrical approach. Some numerical results are given for the following cases: 1) the growth of a subregion for SiO2 under oxidation in various mediums (O2 or H2O) and 2) the dynamics of oxide/material and oxide/oxidant boundaries in a wide range of constitutive parameters and nitride masks covering a part of the silicon surface.

New computational technologies

Downloads

Published

2001-06-27

Issue

Vol. 2 (2001): Issue 1.

Section

Section 1. Numerical methods and applications

Author Biographies

A.L. Alexandrov

S.A. Khristianovich Institute of Theoretical and Applied Mechanics of SB RAS

G.A. Tarnavsky

S.A. Khristianovich Institute of Theoretical and Applied Mechanics of SB RAS

S.I. Shpak

S.A. Khristianovich Institute of Theoretical and Applied Mechanics of SB RAS

A.I. Gulidov

S.A. Khristianovich Institute of Theoretical and Applied Mechanics of SB RAS

M.S. Obrecht

Siborg Systems Inc.,
University of Waterloo

References

  1. Deal B.E., Grove A.S. General relationship for the thermal oxidation of silicon // J. Appl. Phys. 1965. 36. 3770.
  2. Razon R.R., Lie L.N., Deal B.E. Kinetics of high pressure oxidation on silicon in pirogenic steam // J. Electrochem. Soc. 1982. 120, N 1. 2828.
  3. Guillemot N., Pananakakis G., Chenevier P. A new analitical model of «Bird’s Beak» // IEEE Trans. Elec. Dev. 1987. T. ED-34, N 5. 1
  4. Chin D., Oh S.Y., Hu S.M., Dutton R.W., Moll J.L. Two-dimensional oxidation // IEEE Trans. Elec. Dev. 1983. T. ED-30, N 4. 744.
  5. Masetti G., Severi M., Solmi S. Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus- and boron-doped silicon // IEEE Trans. Elec. Dev. 1983. T. ED-30, N 7. 764.
  6. Senez V., Ferreiza P., Baccus B. Two-dimensional simulation of local oxidation of silicon: calibrated viscoelastic flow analysis // IEEE Trans. Elec. Dev. 1996. 43, N 5. 720.
  7. Тарнавский Г.А., Шпак С.И., Обрехт М.С. Численное моделирование и компьютерный алгоритм процесса сегрегации легирующих примесей на границе волны окисления в полупроводниковых подложках // Вычислительные методы и программирование. 2001. 2, № 1. 16-30 (электронный адрес журнала: http://num-meth.srcc.msu.su).