DOI: https://doi.org/10.26089/NumMet.v17r442

Surface roughness of thin film atomistic nanometer-size clusters

Authors

  • F.V. Grigoriev
  • V.B. Sulimov
  • A.V. Tikhonravov

Keywords:

surface roughness
molecular dynamics
thin films
silicon dioxide structure

Abstract

An algorithm of surface roughness calculation for the thin film atomistic clusters obtained in numerical experiments is proposed. The algorithm is applied to silicon dioxide films. The thickness of deposited films is up to 70 nm. The deposition process simulation is performed using the classical molecular dynamics method with the DESIL force field developed earlier specially for high-energy deposition simulation. The dependence of surface roughness on the algorithm parameters, the temperature of the substrate, and the energy of deposited silicon atoms is studied.

New computational technologies

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Published

2016-10-29

Issue

Vol. 17 (2016): Issue 4.

Section

Section 1. Numerical methods and applications

Author Biographies

F.V. Grigoriev

Lomonosov Moscow State University,
Research Computing Center
• Leading Researcher

V.B. Sulimov

Lomonosov Moscow State University,
Research Computing Center
• Head of Laboratory

A.V. Tikhonravov

Lomonosov Moscow State University,
Research Computing Center
• Director

References

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    doi 10.1063/1.2130521