DOI: https://doi.org/10.26089/NumMet.v17r442

Surface roughness of thin film atomistic nanometer-size clusters

Authors

  • F.V. Grigoriev
  • V.B. Sulimov
  • A.V. Tikhonravov

Keywords:

surface roughness
molecular dynamics
thin films
silicon dioxide structure

Abstract

An algorithm of surface roughness calculation for the thin film atomistic clusters obtained in numerical experiments is proposed. The algorithm is applied to silicon dioxide films. The thickness of deposited films is up to 70 nm. The deposition process simulation is performed using the classical molecular dynamics method with the DESIL force field developed earlier specially for high-energy deposition simulation. The dependence of surface roughness on the algorithm parameters, the temperature of the substrate, and the energy of deposited silicon atoms is studied.


Published

2016-10-29

Issue

Section

Section 1. Numerical methods and applications

Author Biographies

F.V. Grigoriev

V.B. Sulimov

A.V. Tikhonravov


References

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    doi 10.1063/1.2130521